JPH0226789B2 - - Google Patents

Info

Publication number
JPH0226789B2
JPH0226789B2 JP56165338A JP16533881A JPH0226789B2 JP H0226789 B2 JPH0226789 B2 JP H0226789B2 JP 56165338 A JP56165338 A JP 56165338A JP 16533881 A JP16533881 A JP 16533881A JP H0226789 B2 JPH0226789 B2 JP H0226789B2
Authority
JP
Japan
Prior art keywords
resistance
resistor
resistors
relative ratio
regions
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP56165338A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5867058A (ja
Inventor
Atsushi Kishi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP56165338A priority Critical patent/JPS5867058A/ja
Priority to DE8282104644T priority patent/DE3273527D1/de
Priority to EP82104644A priority patent/EP0066263B2/en
Publication of JPS5867058A publication Critical patent/JPS5867058A/ja
Priority to US06/867,422 priority patent/US4725876A/en
Publication of JPH0226789B2 publication Critical patent/JPH0226789B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/201Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
    • H10D84/204Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
    • H10D84/209Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of only resistors

Landscapes

  • Semiconductor Integrated Circuits (AREA)
JP56165338A 1981-05-27 1981-10-16 半導体装置 Granted JPS5867058A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP56165338A JPS5867058A (ja) 1981-10-16 1981-10-16 半導体装置
DE8282104644T DE3273527D1 (en) 1981-05-27 1982-05-27 Semiconductor device having two resistors
EP82104644A EP0066263B2 (en) 1981-05-27 1982-05-27 Semiconductor device having two resistors
US06/867,422 US4725876A (en) 1981-05-27 1986-05-15 Semiconductor device having at least two resistors with high resistance values

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56165338A JPS5867058A (ja) 1981-10-16 1981-10-16 半導体装置

Publications (2)

Publication Number Publication Date
JPS5867058A JPS5867058A (ja) 1983-04-21
JPH0226789B2 true JPH0226789B2 (en]) 1990-06-12

Family

ID=15810432

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56165338A Granted JPS5867058A (ja) 1981-05-27 1981-10-16 半導体装置

Country Status (1)

Country Link
JP (1) JPS5867058A (en])

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58182860A (ja) * 1982-04-21 1983-10-25 Hitachi Ltd 半導体集積回路装置
JPS6179249A (ja) * 1984-09-26 1986-04-22 Nec Corp 半導体装置
JPH0445254Y2 (en]) * 1984-12-19 1992-10-23

Also Published As

Publication number Publication date
JPS5867058A (ja) 1983-04-21

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